收藏本站

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2731UT1A
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed
for power management applications of notebook computers and Li-ion
PACKAGE DRAWING (Unit: mm)
battery protection circuit.
1
2
8
7
FEATURES
? Low on-state resistance
R DS(on)1 = 3.3 m Ω MAX. (V GS = ? 10 V, I D = ? 22 A)
R DS(on)2 = 6.4 m Ω MAX. (V GS = ? 4.5 V, I D = ? 22 A)
? Low C iss : C iss = 3620 pF TYP.
? Small and surface mount package (8pin HVSON)
3
4
6 ± 0.2
5.4 ± 0.2
6
5
0.10 S
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.2
1
μ PA2731UT1A-E1-AZ
μ PA2731UT1A-E2-AZ
Note
Note
8pin HVSON
8pin HVSON
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ± 0.2
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals
are connected.)
0.6 ± 0.15
0.7 ± 0.15
Drain to Source Voltage (V GS = 0 V) V DSS
Gate to Source Voltage (V DS = 0 V) V GSS
? 30 V
m 20 V
EQUIVALENT CIRCUIT
Drain Current (pulse)
I D(pulse)
Total Power Dissipation
P T1
Total Power Dissipation (PW = 10 sec)
P T2
Single Avalanche Current
I AS
Single Avalanche Energy
E AS
Drain Current (DC) I D(DC)
Note1
Note2
Note2
Channel Temperature T ch
Storage Temperature T stg
Note3
Note3
m 44 A
m 180 A
1.5 W
4.6 W
° C
150
? 55 to +150 ° C
? 22 A
48 mJ
Gate
Drain
Source
Body
Diode
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
3. Starting T ch = 25 ° C, V DD = ? 15 V, R G = 25 Ω , L = 100 μ H, V GS = ? 20 → 0 V
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17640EJ1V0DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
2005
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
UPA2732UT1A-E1-AY MOSFET LV 8HVSON
UPA2755AGR-E2-AT MOSFET N-CH DUAL 30V 8-SOIC
UPA2756GR-E2-AT MOSFET N-CH DUAL 60V 8-SOIC
UPA2757GR-E2-AT MOSFET N-CH DUAL 30V 8-SOIC
UPA2790GR-E2-AT MOSFET N/P-CH 30V 8-SOIC
UPA2791GR-E2-AT MOSFET N/P-CH 30V 8-SOIC
UPA602T-T1-A MOSFET N-CH DUAL 50V SC-59
UPA603T-T2-A MOSFET P-CH DUAL 50V SC-59
相关代理商/技术参数
UPA2732UT1A-E1-AY 功能描述:MOSFET LV 8HVSON RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
UPA2735GR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m
UPA2735GR-E1-AT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m
UPA2735GR-E2-AT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m
UPA2736GR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m
UPA2736GR-E1-AT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m
UPA2736GR-E2-AT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m
UPA2737GR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -11 A, 13 m